Distributed delay prediction of multi-million gate deep...

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system – Power system

Reexamination Certificate

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C716S030000, C716S030000, C709S241000

Reexamination Certificate

active

07006962

ABSTRACT:
A method and system for predicting delay of a multi-million gate sub-micron ASIC design is disclosed. The method and system include automatically partitioning a netlist into at least two logic cones, and running respective instances of a delay prediction application on the logic cones on at least two computers in parallel.

REFERENCES:
patent: 6263478 (2001-07-01), Hahn et al.
patent: 6622291 (2003-09-01), Ginetti
patent: 2001/0010090 (2001-07-01), Boyle et al.
patent: 2001/0015658 (2001-08-01), Kousai et al.
patent: 2003/0084416 (2003-05-01), Dai et al.
patent: 2004/0006584 (2004-01-01), Vandeweerd
Kapadia et al., “Using partitioning to help convergence in the standard-cell design automation methodology”, ACM, Jun. 1999.
Zhang et al., “Statistically estimating path delay fault coverage in combinational circuits”, IEEE 1995.

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