Distributed collector ballast resistor structure

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Details

357 13, 357 20, 357 36, 357 89, H01L 2702

Patent

active

042020050

ABSTRACT:
A distributed collector ballast resistor structure for use in a distributed collector contacted transistor comprises a diffusion geometry which is designed to employ a number of distributed collector ballast resistors in parallel as opposed to a single bulk resistor in series with the collector circuit thereby generating a lower current for a given voltage during avalanche while allowing lower saturation voltage, better RF gain and higher saturated output power.

REFERENCES:
patent: 4123672 (1978-10-01), Kasperkoritz

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