Distributed circular geometry power amplifier architecture

Amplifiers – With semiconductor amplifying device – Including push-pull amplifier

Reexamination Certificate

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C330S262000

Reexamination Certificate

active

07425869

ABSTRACT:
The present invention discloses a distributed power amplifier topology and device that efficiently and economically enhances the power output of an RF signal to be amplified. The power amplifier comprises a plurality of push-pull amplifiers interconnected in a novel circular geometry that preferably function as a first winding of an active transformer having signal inputs of adjacent amplification devices driven with an input signal of equal magnitude and opposite phase. The topology also discloses the use of a secondary winding that matches the geometry of primary winding and variations thereof that serve to efficiently combine the power of the individual power amplifiers. The novel architecture enables the design of low-cost, fully-integrated, high-power amplifiers in the RF, microwave, and millimeter-wave frequencies.

REFERENCES:
patent: 3098200 (1963-07-01), Jensen
patent: 3157839 (1964-11-01), Brown
patent: 4117415 (1978-09-01), Hoover
patent: 4283685 (1981-08-01), MacMaster et al.
patent: 4305043 (1981-12-01), Ho et al.
patent: 5066925 (1991-11-01), Freitag
patent: 5130664 (1992-07-01), Pavlic et al.
patent: 5208725 (1993-05-01), Akcasu
patent: 5223800 (1993-06-01), Karsten, Jr. et al.
patent: 5698469 (1997-12-01), Mohwinkel et al.
patent: 5920240 (1999-07-01), Alexanian et al.
patent: 5939766 (1999-08-01), Stolmeijer et al.
patent: 6057571 (2000-05-01), Miller et al.
patent: 6121842 (2000-09-01), Adlerstein et al.
patent: 6121843 (2000-09-01), Vampola et al.
patent: 6160455 (2000-12-01), French et al.
patent: 6211728 (2001-04-01), Chen et al.
patent: 6383858 (2002-05-01), Gupta et al.
patent: 6385033 (2002-05-01), Javanifard et al.
patent: 6417535 (2002-07-01), Johnson et al.
patent: 6448847 (2002-09-01), Paul et al.
patent: 12 76 764 (1968-09-01), None
patent: 0 379 202 (1990-07-01), None
patent: 0 556 398 (1993-08-01), None
patent: 1 413 073 (1965-10-01), None
patent: WO97/02654 (1997-01-01), None
Search Report for PCT/US01/31813 dated Jun. 17, 2003 in PCT filing from parent U.S. Appl. No. 09/974,578.
Robertson et al., “Solid State Power Amplifier Using Impedance-Transforming Brach-Line Couplers for L-Band Satellite Systems,” Proceedings of the 23rdEuropean Microwave Conference, Madrid, Sep. 6-9, 1993, Proceedings of the European Microwave Conference, Tumbridge Wells, Reed Exhibition Company, GB, Sep. 6, 1993, pp. 448-450, XP00629961, ISBN: 0-946821-23-2 Figures 1, 3.
Long et al., “The Modeling, Characterization and Design of Monolithic Inductors for Silicon RF IC's,” IEEE Journal of Solid-State Circuits, vol. 32, No. 3, pp. 357-369, Mar. 1997.
Portilla et al., “High Power-Added Efficiency MMIC Amplifier for 2.4 GHz Wireless Communications,” IEEE Journal of Solid State Circuits, vol. 34, No. 1, Jan. 1999.
King-Chun Tsai et al., “A 1.9-GHz, 1-W CMOS Class-E Power Amplifier for Wireless Communications,” IEEE Journal of Solid State Circuits, vol. 34, No. 7,, pp. 962-970, Jul. 1999.
Simbürger et al., A Monolithic Transformer Coupled 5-W Silicon Power Amplifier with 59% PAE at 0.9 GHz, IEEE Journal of Solid-State Circuits, vol. 34, No. 12, pp. 1881-1892, Dec. 1999.
Simbürger et al., “A Monolithic 2.5 V, 1 W Silicon Bipolar Power Amplifier With 55% PAE at 1.9 GHz,” IEEE MTT-S Digest, pp. 853-856, 2000.
Yoo et al., “A Common-Gate Switched, 0.9W Class-E Power Amplifier with 41% PAE in 0.25 μm CMOS,” Integrated Systems Laboratory (IIS), Swiss Federal Institute of Technology (ETH), Zurich Switzerland, 2000 Symposium on VLSI Circuits Digest of Technical Papers, pp. 56 & 57, 2000.
Long, “Monolithic Transformers for Silicon RF IC Design,” IEEE Journal of Solid-State Circuits, vol. 35, No. 9, pp. 1368-1382, Sep. 2000.
Tan et al., “A 900 MHz Fully-Integrated SOI Power Amplifier for Single-Chip Wireless Transceiver Applications,” IEEE Journal of Solid-State Circuits, vol. 35, No. 10, pp. 1481-1486, Oct. 2000.
Gupta et al., “Design and Optimization of CMOS RF Power Amplifiers,” IEEE Journal of Solid-State Circuits, vol. 36, No. 2, pp. 166-175, Feb. 2001.
Aoki et al., “A 2-4-GHz, 2.2-W, 2-V Fully-Integrated CMOS Circular-Geometry Active-Transformer Power Amplifier,” Submitted to CICC-IEEE Custom Integrated Circuits Conference, San Diego, May 6-9, 2001, Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA May 6-Sep. 2001.
Kee et al., “7-MHz, 1.1-kW Demonstration of the New-E/F2.oddSwitching Amplifier Class,” Department of Electrical Engineer, California Institute of Technology, Pasadena, CA 92115, 2001.
Translation of Japanese Office Action (Notice of Reasons for Refusal) mailed Dec. 11, 2007 (4 pgs.).
Patent Abstracts of Japan for Publication No. 06-224605, published Aug. 12, 1994 (1 pg.).
Patent Abstracts of Japan for Publication No. 10-190371, published Jul. 21, 1998 (related to Japanese Patent 2917949) (1 pg.).

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