Distributed channel-bipolar device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 43, 357 25, 357 30, 357 231, H01L 2972, H01L 2702, H01L 2966, H01L 2714

Patent

active

048856231

ABSTRACT:
A merged channel and bipolar device which exploits the distributed character of the device generates useful electronic characteristics by controlling the current and voltage inputs to the four or more terminals attached to the device, said electronic characteristics being useful for affecting the ac and dc current gain of the device, its transconductance, non-linearities, the electronic output characteristics as a function of input signals, electronic switching, gain control, output limiting, heterodyning, harmonic generation and voltage references.
Other applications which employ non-linear behavior include distributed amplification of traveling waves, multiple methods for chemical sensing and other sensor applications. The device behavior can be strongly affected by the device's distributed nature with bipolar behavior and FET behavior substantially different in different regions of the device, and the onset and distribution of this heterogenious behavior being affected directly by the input electrical voltages and currents. Channel geometry and conductivity and gate shape (where a gate is employed) can be used to affect the desired electrical performance. Sensing applications can be affected by intentional modification of surface parameters such as surface recombination, velocity, and by choice of gate materials and gate shape where a gate is used.
Applications of the device encompass electrical parameter generation useful for circuit applications. An example is the generation of an accurate reference voltage V.sub.thg and constant current values, and transducing and sensing applications for sensing chemicals, magnetic fields, forces, pressure, and other tranducing stimuli.

REFERENCES:
patent: 4630084 (1986-12-01), Tihanyi
patent: 4748484 (1988-05-01), Takakuwa et al.
Reddi, "Influence of Surface Conditions on Silicon Planar Transistor Current Gain", SOLID-STATE ELECTRONICS, Pergamon Press, 1967, vol. 10, pp. 305-334.
Chih-Tang Sah, "Effect of Surface Recombination and Channel on P-N Junction and Transistor Characteristics", IRE TRANSACTIONS ON ELECTRON DEVICES, January 1962, pp. 94-108.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Distributed channel-bipolar device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Distributed channel-bipolar device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Distributed channel-bipolar device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2037571

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.