Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1992-02-14
1994-02-01
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257276, 257280, H01L 29812
Patent
active
052834522
ABSTRACT:
A distributed cell field-effect transistor (FET) amplifier (40) includes a plurality of parallel, elongated source (46a) and drain (46b) regions of individual FET unit cells (46) formed in a substrate (42) in transverse alternating relation, with a plurality of elongated channel regions (46c) being formed between and parallel to adjacent source (46a) and drain (46b) regions respectively. A source foot (48) and a drain foot (50) extend perpendicular to the source (46a) and drain (46b) regions on opposite longitudinally spaced sides thereof respectively. A gate foot (52) extends parallel to the source (48) and drain (50) feet, between the source foot (48) and the cells (46). Source (54) and drain (56) pads and gate (58) fingers extend from the source (48), drain (50) and gate (52) feet into electrical connection with the respective source (46a), drain (46b) and gate ( 46c) regions respectively. The source pads (54) include airbridge portions (54b) which extend over the gate foot (52) without making contact therewith. A fixed tuning circuit (70) is connected between the gate foot (52) and source foot (48), including an inductive stub (72) having a first end connected to the gate foot (52) and a second end, and a capacitor (74) having a first plate (74a) which is integral with the source foot (48) and a second plate connected to the second end of the stub (72). The integration of the capacitor (74) with the source foot (48) enables the amplifier (40) to be tuned at the gate foot (52), thereby eliminating undesirable coupling effects and the need for a separate via for the tuning circuit (70).
REFERENCES:
patent: 4359754 (1982-11-01), Hayakawa et al.
patent: 5160984 (1992-11-01), Mochizuki et al.
"GaAs MESFET Circuit Design", by R. Soares, Artech House, 1988 pp. 134.
"MMIC Technology: Better Performance at Affordable Cost", in Microwave Journal, Apr. 1988, pp. 135-143.
Chi Tom Y.
Hwang Vincent
Le Huy M.
Shih Yi-Chi
Wang David C.
Denson-Low W. K.
Grunebach Georgann S.
Gudmestad Terje
Hughes Aircraft Company
Munson Gene M.
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