Distributed bragg reflector type semiconductor laser

Details Distributed bragg reflector type semiconductor laser Distributed bragg reflector type semiconductor laser

1988-08-31

1990-04-03

Sikes, William L.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 45, H01S 319, H01S 308

Patent

active

049146700

ABSTRACT:
Disclosed are a distributed Bragg reflector type semiconductor laser and a method of manufacturing such a laser a high yields, in which the upper surface of an active waveguide is covered by an external waveguide, the external waveguide is disposed on the same surface as the active waveguide at side portions thereof, the external waveguide is coupled with the edge surfaces of the active waveguide without any gap remaining, and the coupling ratio of the active waveguide and external waveguide is high.

REFERENCES:
patent: 4815087 (1989-03-01), Hayashi
Y. Tohmori et al., Japanese Journal of Applied Physics, vol. 24, No. 6, Jun. 1985, pp. L339-L401.
Y. Abe et al., Electronic Letters, Dec. 10, 1981, vol. 25/26, pp. 945-947.
T. P. Pearsall, ed., GalnAsP Alloy Semiconductors, (John Wiley and Sons), pp. 346-353.

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