Distributed bragg reflector for optoelectronic device

Coherent light generators – Particular resonant cavity – Distributed feedback

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S045013, C372S046012

Reexamination Certificate

active

06990135

ABSTRACT:
An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device. To alleviate this, the present invention contemplates providing an implant, etch or other suitable process to reduce or eliminate one or more electrical artifacts associated with the junction between the oxidized portion and un-oxidized portion of these layers as well as reducing the oxidation of other aluminum bearing layers of the DBR.

REFERENCES:
patent: 4317085 (1982-02-01), Burnham et al.
patent: 4466694 (1984-08-01), MacDonald
patent: 4660207 (1987-04-01), Svilans
patent: 4675058 (1987-06-01), Plaster
patent: 4784722 (1988-11-01), Liau et al.
patent: 4885592 (1989-12-01), Kofol et al.
patent: 4901327 (1990-02-01), Bradley
patent: 4943970 (1990-07-01), Bradley
patent: 4956844 (1990-09-01), Goodhue et al.
patent: 5031187 (1991-07-01), Orenstein et al.
patent: 5052016 (1991-09-01), Mahbobzadeh et al.
patent: 5056098 (1991-10-01), Anthony et al.
patent: 5062115 (1991-10-01), Thornton
patent: 5068869 (1991-11-01), Wang et al.
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5115442 (1992-05-01), Lee et al.
patent: 5117469 (1992-05-01), Cheung et al.
patent: 5140605 (1992-08-01), Paoli et al.
patent: 5157537 (1992-10-01), Rosenblatt et al.
patent: 5158908 (1992-10-01), Blonder et al.
patent: 5216263 (1993-06-01), Paoli
patent: 5216680 (1993-06-01), Magnusson et al.
patent: 5237581 (1993-08-01), Asada et al.
patent: 5245622 (1993-09-01), Jewell et al.
patent: 5258990 (1993-11-01), Olbright et al.
patent: 5262360 (1993-11-01), Holonyak, Jr. et al.
patent: 5285466 (1994-02-01), Tabatabaie
patent: 5293392 (1994-03-01), Shieh et al.
patent: 5317170 (1994-05-01), Paoli
patent: 5317587 (1994-05-01), Ackley et al.
patent: 5325386 (1994-06-01), Jewell et al.
patent: 5331654 (1994-07-01), Jewell et al.
patent: 5337074 (1994-08-01), Thornton
patent: 5337183 (1994-08-01), Rosenblatt et al.
patent: 5349599 (1994-09-01), Larkins
patent: 5351256 (1994-09-01), Schneider et al.
patent: 5359447 (1994-10-01), Hahn et al.
patent: 5359618 (1994-10-01), Lebby et al.
patent: 5363397 (1994-11-01), Collins et al.
patent: 5373520 (1994-12-01), Shoji et al.
patent: 5373522 (1994-12-01), Holonyak, Jr. et al.
patent: 5386426 (1995-01-01), Stephens
patent: 5390209 (1995-02-01), Vakhshoori
patent: 5396508 (1995-03-01), Bour et al.
patent: 5404373 (1995-04-01), Cheng
patent: 5412678 (1995-05-01), Treat et al.
patent: 5412680 (1995-05-01), Swirhum et al.
patent: 5416044 (1995-05-01), Chino et al.
patent: 5428634 (1995-06-01), Bryan et al.
patent: 5438584 (1995-08-01), Paoli et al.
patent: 5446754 (1995-08-01), Jewell et al.
patent: 5465263 (1995-11-01), Bour et al.
patent: 5475701 (1995-12-01), Hibbs-Brenner
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5497390 (1996-03-01), Tanaka et al.
patent: 5513202 (1996-04-01), Kobayashi et al.
patent: 5530715 (1996-06-01), Shieh et al.
patent: 5555255 (1996-09-01), Kock et al.
patent: 5557626 (1996-09-01), Grodzinski et al.
patent: 5561683 (1996-10-01), Kwon
patent: 5567980 (1996-10-01), Holonyak, Jr. et al.
patent: 5568499 (1996-10-01), Lear
patent: 5574738 (1996-11-01), Morgan
patent: 5581571 (1996-12-01), Holonyak, Jr. et al.
patent: 5586131 (1996-12-01), Ono et al.
patent: 5590145 (1996-12-01), Nitta
patent: 5598300 (1997-01-01), Magnusson et al.
patent: 5606572 (1997-02-01), Swirhun et al.
patent: 5625729 (1997-04-01), Brown
patent: 5642376 (1997-06-01), Olbright et al.
patent: 5645462 (1997-07-01), Banno et al.
patent: 5646978 (1997-07-01), Kem et al.
patent: 5648978 (1997-07-01), Sakata
patent: 5696023 (1997-12-01), Holonyak, Jr. et al.
patent: 5699373 (1997-12-01), Uchida et al.
patent: 5712188 (1998-01-01), Chu et al.
patent: 5726805 (1998-03-01), Kaushik et al.
patent: 5727013 (1998-03-01), Botez et al.
patent: 5727014 (1998-03-01), Wang et al.
patent: 5774487 (1998-06-01), Morgan
patent: 5778018 (1998-07-01), Yoshikawa et al.
patent: 5784399 (1998-07-01), Sun
patent: 5818066 (1998-10-01), Duboz
patent: 5828684 (1998-10-01), Van de Walle
patent: 5838705 (1998-11-01), Shieh et al.
patent: 5838715 (1998-11-01), Corzine et al.
patent: 5896408 (1999-04-01), Corzine et al.
patent: 5901166 (1999-05-01), Nitta et al.
patent: 5903588 (1999-05-01), Guenter et al.
patent: 5903589 (1999-05-01), Jewell
patent: 5903590 (1999-05-01), Hadley et al.
patent: 5908408 (1999-06-01), McGary et al.
patent: 5940422 (1999-08-01), Johnson
patent: 5953362 (1999-09-01), Pamulapati et al.
patent: 5978401 (1999-11-01), Morgan
patent: 5978408 (1999-11-01), Thornton
patent: 5995531 (1999-11-01), Gaw et al.
patent: 6002705 (1999-12-01), Thornton
patent: 6008675 (1999-12-01), Handa
patent: 6014395 (2000-01-01), Jewell
patent: 6043104 (2000-03-01), Uchida et al.
patent: 6055262 (2000-04-01), Cox et al.
patent: 6078601 (2000-06-01), Smith
patent: 6144682 (2000-11-01), Sun
patent: 6154480 (2000-11-01), Magnusson et al.
patent: 6185241 (2001-02-01), Sun
patent: 6191890 (2001-02-01), Baets et al.
patent: 6208681 (2001-03-01), Thornton
patent: 6212312 (2001-04-01), Grann et al.
patent: 6238944 (2001-05-01), Floyd
patent: 6269109 (2001-07-01), Jewell
patent: 6297068 (2001-10-01), Thornton
patent: 6317446 (2001-11-01), Wipiejewski
patent: 6320893 (2001-11-01), Ueki
patent: 6372533 (2002-04-01), Jayaraman et al.
patent: 6411638 (2002-06-01), Johnson et al.
patent: 6459713 (2002-10-01), Jewell
patent: 6545335 (2003-04-01), Chua et al.
patent: 6570905 (2003-05-01), Ebeling
patent: 6700914 (2004-03-01), Yokouchi et al.
patent: 6829283 (2004-12-01), Ebeling
patent: 2002/0154675 (2002-10-01), Deng et al.
patent: 4240706 (1994-06-01), None
patent: 0288184 (1988-10-01), None
patent: 0776076 (1997-05-01), None
patent: 60123084 (1985-01-01), None
patent: 02054981 (1990-02-01), None
patent: 5299779 (1993-11-01), None
patent: WO 98/57402 (1998-12-01), None
patent: WO 02/37630 (2002-10-01), None
Choquette, Kent D., et al., Design of Oxide Aperture Profile within Selectively Oxidized VCSELs, IEEE, Conference Proceedings, LEOS '98, 11th Annual Meeting, Orlando, Florida, Dec. 1-4, 1998, pp. 179-180.
Banwell et al., “VCSE Laser Transmitters for Parallel Data Links”,IEEE Journal of Quantum Electronics, vol. 29, No. 2, Feb. 1993, pp. 635-644.
Bowers et al., “Fused Vertical Cavity Lasers With Oxide Aperture”, Final report for MICRO project 96-042, Industrial Sponsor: Hewlett Packard, 4 pages, 1996-97.
Catchmark et al., “High Temperature CW Operation of Vertical Cavity Top Surface-Emitting Lasers”, CLEO 1993, p. 138.
Chemla et al., “Nonlinear Optical Properties of Semiconductor Quantum Wells”,Optical Nonlinearities and Instabilities in Semiconductors, Academic Press, Inc., Copyright 1988, pp. 83-120.
Choe, et al., “Lateral oxidation of AIAs layers at elevated water vapour pressure using a closed-chamber system,” Letter to the Editor, Semiconductor Science Technology, 15, pp. L35-L38, Aug. 2000.
Choa et al., “High-Speed Modulation of Vertical-Cavity Surface-Emitting Lasers”,IEEE Photonics Technology Letter, vol. 3, No. 8, Aug. 1991, pp. 697-699.
Choquette et al., “High Single Mode Operation from Hybrid Ion Implanted/Selectively Oxidized VCSELs”, 2000 IEEE 1

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Distributed bragg reflector for optoelectronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Distributed bragg reflector for optoelectronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Distributed bragg reflector for optoelectronic device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3524628

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.