Distributed Bragg reflector (DBR) structure in vertical...

Details Distributed Bragg reflector (DBR) structure in vertical... Distributed Bragg reflector (DBR) structure in vertical...

2006-10-05

2008-05-06

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050124, C372S099000

Reexamination Certificate

active

07369595

ABSTRACT:
A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.

REFERENCES:
patent: 6621843 (2003-09-01), Yoo et al.
patent: 6721348 (2004-04-01), Moser et al.
patent: 2002/0075922 (2002-06-01), Yoo et al.
patent: 1019910020979 (1996-12-01), None
patent: 1020010048104 (2001-06-01), None
patent: 1020040010719 (2004-01-01), None
patent: 1020040050249 (2004-06-01), None

Affiliated with

Also associated with

Rating

Distributed Bragg reflector (DBR) structure in vertical... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Distributed Bragg reflector (DBR) structure in vertical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Distributed Bragg reflector (DBR) structure in vertical... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3982395