Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1988-12-27
1990-11-27
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330 54, 330286, H03F 316, H03F 360
Patent
active
049739182
ABSTRACT:
A distributed circuit includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, with a first portion, or a first channel, of such FETS having gate electrodes and drain electrodes successively coupled between a first input terminal and a first ouput terminal, and a second like portion or a second channel of such FETS having gate electrodes and drain electrodes successively coupled between the first input terminal and a second output terminal. Separate bias circuits are provided to the input electrodes and the output electrodes of the first and second channels. Bias signals fed to the input bias circuits and coupled to the input electrodes to place the FETS in an "on" state to provide gain to r.f. input signals fed thereto, or in a "pinch-off" state to isolate r.f. signals fed to the input electrodes of the FETS. Accordingly, a 1.times.2 signal splitter or a 1.times.2 switch which provides gain to a signal is provided.
REFERENCES:
patent: 4337439 (1982-06-01), Sosin
patent: 4543535 (1985-09-01), Ayasli
patent: 4668920 (1987-05-01), Jones
patent: 4772858 (1988-09-01), Tsukii et al.
Maloney Denis G.
Mottola Steven
Raytheon Company
Sharkansky Richard M.
LandOfFree
Distributed amplifying switch/r.f. signal splitter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Distributed amplifying switch/r.f. signal splitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Distributed amplifying switch/r.f. signal splitter will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1034263