Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1989-12-27
1991-04-30
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 54, 330277, H03F 360
Patent
active
050122037
ABSTRACT:
A distributed amplifier has a plurality of amplifying sections which are connected between input and output lines comprising artificial transmission line sections. Input line attenuation compens
REFERENCES:
patent: 3255421 (1966-06-01), Skalski
patent: 3564442 (1971-02-01), Germann
patent: 3833858 (1974-09-01), Gandhi et al.
patent: 3986133 (1976-10-01), Roza et al.
patent: 4311966 (1982-01-01), Bert et al.
patent: 4423386 (1983-12-01), Gerard
patent: 4446445 (1984-05-01), Apel
patent: 4486719 (1984-12-01), Ayasli
patent: 4532480 (1985-07-01), Gerard
patent: 4540954 (1985-09-01), Apel
patent: 4543535 (1985-09-01), Ayasli
patent: 4595881 (1985-06-01), Kennan
patent: 4658220 (1987-04-01), Heston et al.
patent: 4675911 (1987-06-01), Sokolov et al.
patent: 4752746 (1988-06-01), Niclas
patent: 4754234 (1988-06-01), Gamand
patent: 4769618 (1988-09-01), Parish et al.
patent: 4780684 (1988-10-01), Kosmahl
patent: 4788511 (1988-11-01), Schindler
patent: 4847568 (1989-07-01), Nazoa-Ruiz
James B. Beyer, et al., "MESFET Distributed Amplifier Design Guidelines," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-32, vol. 3, Mar. 1984, pp. 268-275.
Ayasli, et al., "Monolithic 2-20 GHz GaAs Traveling-Wave Amplifier," Electronics Letters, vol. 18, No. 14, Jul. 8, 1982, pp. 596-598.
E. W. Strid, et al., "A DC-12 GHz Monolithic GaAsFET Distributed Amplifier," IEEE Transactions on Electron Devices, vol. ED. 29, No. 7, Jul. 1982, pp. 1065-1071.
Y. Ayasli, et al., "A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-30, No. 7, Jul., 1982, pp. 976-981.
J. B. Beyer, et al., "Y Band Monolithic Microwave Amplifier Study," University of Wisconsin-Madison, Dept. ECE, Report No. ECE-83-6, 1983.
B. Kim, et al., "0.5W 2-21 GHz Monolithic GaAs Distributed Amplifier," Electronics Letters, vol. 20, No. 7, Mar., 1984, pp. 288-289.
J. B. Beyer, et al., "MESFET Distributed Amplifier Design Guidelines," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-32, No. 3, Mar. 1984, pp. 268-275.
W. Kennan, et al., "A 2-18-GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET's," IEEE Transactions on Electron Devices, vol. ED-31, No. 12, Dec. 1984, pp. 1926-1930.
B. Kim, et al., "High Power Distributed Amplifier Using MBE Synthesized Material," NIEE Microwave Millimeterwave Monolithic Circuits Symposium Digest, St. Louis, Mo., 1985, pp. 35-37.
R. C. Becker, et al., "On Gain-Bandwidth Product for Distributed Amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-34, No. 6, Jun., 1986, pp. 736-738.
M. J. Schindler, et al., "A 15 to 45 GHz Distributed Amplifier Using 3 FETS of Varying Periphery," in 1986 IEEE GaAs IC Symposium, pp. 67-70.
E. M. Chase, et al., "A Power Distributed Amplfier Using Constant-R Networks," in 1986 IEEE MTT-S International Microwave Symposium Digest, pp. 811-815.
R. A. Larue, et al., "A 12-dB High-Gain Monolithic Distributed Amplifier," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-34, No. 12, Dec. 1986, pp. 1542-1547.
T. McKay, et al., "A High-Performance 2-18.5-GHz Distributed Amplifier--Theory and Experiment," IEEE Transactions on Microwave Theory and Techniques, vol. MTT-34, No. 12, Dec. 1986, pp. 1559-1568.
S. G. Bandy, et al., "A 2-20 GHz High-Gain Monolithic HEMT Distributed Amplifier," IEEE Transaction on Microwave Theory and Techniques, vol. MMT-35, No. 12, Dec. 1987, pp. 1494-1499.
Beyer James B.
Deibele Steven
Mottola Steven
Wisconsin Alumni Research Foundation
LandOfFree
Distributed amplifier with attenuation compensation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Distributed amplifier with attenuation compensation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Distributed amplifier with attenuation compensation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-643197