Distributed amplifier topologies with improved gain...

Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling

Reexamination Certificate

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C330S295000

Reexamination Certificate

active

07414477

ABSTRACT:
A distributed amplifier is provided that includes an input network that simulates an input signal transmission line, and having an output network that simulates an output signal transmission line, and also having multiple unit cells with amplifying characteristics that are connected in parallel to one another between the input network and the output network, that amplify a signal propagating through the input network and feed it into the output network with a predetermined phase relationship to a signal propagating through the output network. The distributed amplifier is characterized in that each unit cell has a multiplier with an input amplifier and an output amplifier, a control connection of the input amplifier is connected to the input network, a current connection of the input amplifier is connected to a control connection of the output amplifier and is connected through a diode to a current connection of the output amplifier, and current outputs of the input amplifier and of the output amplifier are connected to one another.

REFERENCES:
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patent: 5331289 (1994-07-01), Price
patent: 6304997 (2001-10-01), Huber
patent: 6727762 (2004-04-01), Kobayashi
patent: 690 26 796 (1991-06-01), None
patent: 197 01 067 (1998-07-01), None
patent: WO 01/84706 (2001-11-01), None
Kevin W. Kobayashi et al., “A Novel HBT Distributed Amplifier Design Topology Based on Attenuation Compensation Techniques,” IEEE Transactions on Microwave Theory and Techniques, vol. 42, Issue 12, Dec. 1994, pp. 2583-2589.
U. Tietze et al., “Halbleiter-Schaltungstechnik,” 9th edition, Springer Verlag 1989, p. 488.

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