Distributed amplifier having improved D.C. biasing and voltage s

Details Distributed amplifier having improved D.C. biasing and voltage s Distributed amplifier having improved D.C. biasing and voltage s

1987-01-29

1989-09-05

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330 54, 330296, H03F 360

Patent

active

048642509

ABSTRACT:
A distributed amplifier having an on chip DC biasing network including a spiral inductor. The spiral inductor has a low resistance for providing a minimal resistance path for the DC biasing, while also having a high inductance for isolating the RF signal from the DC bias sources. Additionally, an inductive lead connected between the spiral inductor and the amplifier has a predetermined inductance such that this inductance is matched with the inherent capacitance of the spiral inductor in order to provide a substantially same impedance as that of the amplifying stages.

REFERENCES:
patent: 3218569 (1965-11-01), Beck
Decker, "An 8 GHz MMIC Preamplifier" 1981 IEEE MTT-S International Microwave Symposium, Jun. 15-19, 1981, pp. 365-366.
Fujiki et al, "A12 GHz 140 K Low Noise GaAs FET Amplifier," 1980 IEEE MTT-S Digest, May 28-30, 1980, pp. 370-372.
Itoh et al, "12 GHz-Band Low-Noise GaAs Monolithic Amplifiers," 1983 IEE MTT-S Digest, pp. 54-58.
Lee, "MOSFETs Rejuvenate Old Design For CATV Broadband Amplifiers", Electronics, Mar. 15, 1971, pp. 72-75.
Naster et al, "Silicon-on Sapphire Monolithic Microwave ICs", 1981 IEEE International Solid-State Circuits Conference, Feb. 18, 1981, pp. 72-73.
Sechi, "Design Procedure For High-Efficiency Linear Microwave Power Amplifiers", IEEE Transactions On Microwave Theory and Techniques, V. MTT-28, No. 11, Nov. 1980, pp. 1157-1163.
Yokouchi et al, "4 GHz 3 Watts FET Amplifier For Digital Transmission," 1978 IEEE MTT-S International Microwave Symposium, Jun. 27-29, 1978, pp. 276-278.
1983 IEEE MTT-S Digest, pp. 70-73.

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