Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Reexamination Certificate
2008-07-29
2008-07-29
Choe, Henry K (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
C330S296000
Reexamination Certificate
active
07405626
ABSTRACT:
A distributed amplifier is disclosed herein, which includes a signal amplification unit amplifying a RF input signal fed into the RF signal, a first biasing circuit providing a direct current (DC) bias signal, a second biasing circuit providing a DC bias signal, the variable terminal resistance providing an adjustable resistance, a RF signal input terminal provided for input of the RF input signal and a RF signal output terminal for output of a RF output signal. The output RF signal from the distributed amplifier is obtained from a gained version of the input RF signal. Since a load mismatch issue is compensated, a gain flatness issue is considerably improved and thus a gain-adjustable range is increased with respect to the distributed amplifier.
REFERENCES:
patent: 5365197 (1994-11-01), Ikalainen
patent: 5831476 (1998-11-01), Buer et al.
patent: 6433640 (2002-08-01), Pavio et al.
patent: 6674329 (2004-01-01), Stengel et al.
Shin Shih-Chieh
Tsai Ming-Da
Wang Huei
Birch & Stewart Kolasch & Birch, LLP
Choe Henry K
National Taiwan University
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