Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1988-03-28
1989-07-04
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, H03F 316, H03F 360
Patent
active
048454400
ABSTRACT:
A wide band amplifier for operation at very high frequencies, for example in the 20 MHz to 50 GHz range comprises a MESFET distributed amplifier (22) having a gate and a drain transmission line, a first hybrid circuit (18) to apply a first and second input signal to opposite ends of the gate transmission line, and a second hybrid circuit (26) connected to opposite ends of the drain transmission line to receive and combine first and second output signals from the drain transmission line to provide an amplified output signal. The use of two input signals travelling in opposite directions along the gate transmission line increases the gain which can be achieved in the distributed amplifier and reduces the noise component of the output signal. It is particularly useful for enhancing the performance of a distributed amplifier containing only a few MESFETs.
REFERENCES:
patent: 4532480 (1985-07-01), Gerard
Mottola Steven
National Research Development Corporation
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