Distortionless FET switching circuit

Details Distortionless FET switching circuit Distortionless FET switching circuit

1974-05-20

1976-03-02

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307237, H03K 1760, H03K 1766, H03K 1710, H03K 500

Patent

active

039420396

ABSTRACT:
A switching circuit is disclosed in which a first field effect transistor (which will be hereinafter referred to as an FET simply) is provided in such a manner that its source-drain are connected between an input terminal and output terminal and its source and drain electrodes are connected to a bias source through resistors, and a second FET of a source follower type is provided such that its gate electrode is connected to the source electrode of the first FET and its source electrode is connected to the gate electrode of the first FET. In this case, by changing the source electrode voltage level of the second FET, the first FET is made on and off to perform a switching operation.

REFERENCES:
patent: 3448293 (1969-06-01), Russell
patent: 3521141 (1970-07-01), Walton
patent: 3532899 (1970-10-01), Huth et al.
patent: 3558921 (1971-01-01), Yokozawa et al.
patent: 3678297 (1972-07-01), Takahashi
patent: 3708694 (1973-01-01), Evans
patent: 3746893 (1973-07-01), Bretagne
patent: 3764921 (1973-10-01), Huard
Field Effect Transistors - Theory and Applications Notes, No. 2 Amelco Semiconductor Division of Teledyne, Inc., pp. 1-7; 6/1962.

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