Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2007-07-24
2007-07-24
Crane, Sara (Department: 2811)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S931000, C257S077000, C257SE21054, C257SE21065
Reexamination Certificate
active
10431819
ABSTRACT:
A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer formed by the methods of the invention.
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Arena Andrew O
Caracal, Inc.
Crane Sara
Schnader Harrison Segal & Lewis LLP
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