Disposable hard mask for forming bit lines

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S585000, C438S706000

Reexamination Certificate

active

11100563

ABSTRACT:
A method includes forming a group of disposable hard mask structures on a semiconductor device that includes a group of memory cells. The method further includes using the disposable hard mask structures to precisely control a junction profile of the memory cells.

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2002 IEEE International Solid-State Circuits Conference, Session 6, “SRAM and Non-Volatile Memories,” Feb. 4, 2004,6pages.
2002 IEEE International Solid-State Circuits Conference, 29 pages.

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