Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-05-24
2005-05-24
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000
Reexamination Certificate
active
06897491
ABSTRACT:
In an electroluminescent display device comprising layers of anode electrodes (102), cathode electrodes (104), and an electroluminescent layer (105), a dummy electrode (103) is arranged along the edge of te anode electrode layer. The dummy electrode is unconnected to the electrical control means (106,107) that control the voltage of the electrodes of the active area of the display. The unconnected state of the dummy electrode results in a situation where the dummy electrode attains a floating electric potential owing to the lateral electric field produced by neighboring electrodes. This leads to a reduction in the strength of the lateral electric field between the dummy electrode and the adjacent electrodes, thus alleviating the negative effects of electrochemical oxidation of the electrodes at the edge of the active area.
REFERENCES:
patent: 20020131253 (2002-09-01), Kobayashi
Koninklijke Philips Electronics , N.V.
Ngo Ngan V.
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