Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-01-04
2011-01-04
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S776000, C257SE27010, C257SE21533, C257SE23143, C257SE23170, C438S029000
Reexamination Certificate
active
07863615
ABSTRACT:
A display unit includes, on an insulating substrate, a plurality of wirings formed to extend in different directions, a thin-film transistor, and a display element. At least one of the plurality of wirings is a divided wiring having a crossing portion formed at an intersection with the other of the plurality of wirings, and a main portion which is formed in a layer same as the other of the plurality of wirings with an insulating film in between and which is electrically connected to the crossing portion via an conductive connection provided in the insulating film. At least one of the main portion and the crossing portion includes a first layer and a second layer stacked in order from the insulating substrate side, the second layer being in direct contact with the first layer and made of a material of a higher melting point than the first layer.
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Japanese Patent Office, Office Action issued in Patent Application JP 2007-272754, on Aug. 4, 2009.
Japanese Patent Office Action corresponding to Japanese Serial No. 2007-272754 dated Dec. 8, 2009.
Hayashi Naoki
Hiromasu Yasunobu
Makita Atsuya
Liu Benjamin Tzu-Hung
Ngo Ngan
SNR Denton US LLP
Sony Corporation
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