Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-04-19
2011-04-19
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S711000, C438S712000, C438S713000, C438S714000, C438S715000, C257SE21218, C257SE21413, C257SE29137
Reexamination Certificate
active
07928013
ABSTRACT:
A rework method of a gate insulating layer of a thin film transistor includes the following steps. First, a substrate including a silicon nitride layer, which serves as a gate insulating layer, disposed thereon. Subsequently, a first film removal process is performed to remove the silicon nitride layer. The first film removal process includes an inductively coupled plasma (ICP) etching process. The ICP etching process is carried out by introducing gases including sulfur hexafluoride and oxygen. The ICP etching process has an etching selectivity ratio of the silicon nitride layer to the substrate, which is substantially between 18 and 30.
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Chang Chia-Hsu
Chen Pei-Yu
AU Optronics Corp.
Hsu Winston
Margo Scott
Richards N Drew
Singal Ankush k
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