Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-09-22
2009-08-18
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE27132
Reexamination Certificate
active
07576358
ABSTRACT:
A display panel includes a plurality of sets of transistors which are formed on an upper side of a substrate. An insulating film is formed to cover upper surfaces of the transistors and has a plurality of trenches formed in an upper surface thereof. A plurality of first interconnections are buried in the trenches. An interconnection insulating film covers upper surfaces of the first interconnections. A plurality of second interconnections are provided on an upper side of the interconnection insulating film. Each of a plurality of pixel electrodes is provided between two adjacent interconnections of the second interconnections. Each of a plurality of light-emitting layers is provided on one of the pixel electrodes. A counter electrode is provided on the light-emitting layers.
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Japanese Office Action dated Nov. 11, 2008, issued in counterpart Japanese Application No. 2004-283519, and English translation thereof.
Chinese Office Action (and English translation thereof) dated Jun. 27, 2008, issued in a counterpart Chinese Application.
Ogura Jun
Shirasaki Tomoyuki
Tohyama Tadahisa
Casio Computer Co. Ltd.
Frishauf Holtz Goodman & Chick P.C.
Kuo W. Wendy
Tran Minh-Loan T
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