Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-01-25
2011-01-25
Huynh, Andy (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257SE21637, C257SE29291, C438S627000, C438S678000, C438S151000, C438S152000, C438S153000, C438S154000, C438S155000, C438S156000
Reexamination Certificate
active
07875885
ABSTRACT:
A display element and a method of manufacturing the same are provided. The method comprises the following steps: forming a first patterned conducting layer with a gate on a substrate and a dielectric layer thereon; forming a patterned semiconductor layer on the dielectric layer, wherein the patterned semiconductor layer has a channel region, a source and a drain, and wherein the source and the drain lie on the opposite sides of the channel region; selectively depositing a barrier layer, which only wraps the patterned semiconductor layer; forming a second patterned conducting layer on the barrier layer and above the source and the drain. In the display element manufactured by the method, the barrier layer only wraps the patterned semiconductor layer.
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Yamashito, et al.; “Comparative Study of the Electroless Deposition of Nickel;” Anales de la Association Quimica Argentina; 1986; vol. 74; pp. 61-73.
Chen Po-Lin
Lin Chun-Nan
Tsai Wen-Ching
Tu Kuo-Yuan
AU Optronics Corp.
Dehne Aaron A
Huynh Andy
Thomas Kayden Horstemeyer & Risley LLP
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