Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2009-01-08
2011-10-04
Pham, Hoai V (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S089000, C257SE33056
Reexamination Certificate
active
08030671
ABSTRACT:
A thin film transistor layer including a thin film transistor is formed at a liquid crystal layer side of a color filter layer on an array substrate. Since it becomes possible to form the color filter layer at a position on a relatively flat glass substrate, satisfactory characteristics of the color filter layer can be obtained. The color filter layer is unlikely to have influence on the thin film transistor layer, so that the yield can be improved.
REFERENCES:
patent: 6906348 (2005-06-01), Sugiura
patent: 08-262484 (1996-10-01), None
patent: 2005-258004 (2005-09-01), None
Ikeda Azusa
Kawata Yasushi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Pham Hoai V
Toshiba Matsushita Display Technology Co., Ltd.
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