Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1992-01-02
1995-04-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 359 59, H01L 2701, H01L 2713, H01L 2978
Patent
active
054101646
ABSTRACT:
A display elect:rode substrate comprising at least two, first and second, TFTs connected in series to each picture element, wherein the first and second thin film transistors are Juxtaposed on the same one of the gate bus lines, part of the gate bus line functions as gate electrodes of the first and second thin film transistors, a source electrode of the first thin film transistor is connected to the source bus line, a drain electrode of the first thin film transistor is connected to a source electrode of the second thin film transistor, and a drain electrode of the second thin film transistor is connected to the picture element electrode, whereby a picture element defect caused by a short-circuit defect of the TFTs can be reduced.
REFERENCES:
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patent: 4894690 (1990-01-01), Okabe et al.
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patent: 4917467 (1990-04-01), Chen et al.
patent: 4930874 (1990-06-01), Mitsumune et al.
patent: 4938565 (1990-07-01), Ichikawa
Kanemori Yuzuru
Katayama Mikio
Morimoto Hiroshi
Negoto Hidenori
Tanaka Hirohisa
Crane Sara W.
Sharp Kabushimi Kaisha
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