Electric lamp and discharge devices – Discharge devices having a multipointed or serrated edge...
Patent
1999-11-01
2000-10-24
Patel, Nimeshkumar D.
Electric lamp and discharge devices
Discharge devices having a multipointed or serrated edge...
313351, 313336, 313495, 313497, H01J 102
Patent
active
061372145
ABSTRACT:
A field emission device having a gate electrode structure in which a nanocrystalline or microcrystalline silicon layer is positioned over a silicon dioxide dielectric layer. Also disclosed are methods for forming the field emission device. The nanocrystalline or microcrystalline silicon layer forms a bond with the dielectric layer that is sufficiently strong to prevent delamination during a chemical-mechanical planarization operation that is conducted during formation of the field emission device. The nanocrystalline or microcrystalline silicon layer is deposited by PECVD in an atmosphere that contains silane and hydrogen at a ratio in a range from about 1:15 to about 1:40. Multiple field emission devices may be formed and included in a flat panel display for computer monitors, telecommunications devices, and the like.
REFERENCES:
patent: 5229331 (1993-07-01), Doan et al.
patent: 5371431 (1994-12-01), Jones et al.
patent: 5372973 (1994-12-01), Doan et al.
patent: 5448131 (1995-09-01), Taylor et al.
patent: 5521461 (1996-05-01), Garcia
patent: 5525857 (1996-06-01), Gnade et al.
patent: 5534743 (1996-07-01), Jones et al.
patent: 5789857 (1998-08-01), Yamaura et al.
Fluckiger et al., "Structural and Electrical Properties of Undoped Microcrystalline SIlicon Grown by 70 MHz and 13.56 MHz PECVD," Mat. Res. Soc. Symp. Proc., vol. 358, pp. 751-756 (1995).
He et al., "Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors, TFTS," Mat. Res. Soc. Symp. Proc., vol. 345, pp. 53-58 (1994).
He et al., "Low Temperature Plasma-Assisted Deposition Process for Microcrystalline Thin Film Transistors, TFTS," Mat. Res. Soc. Symp. Proc., vol. 336, pp. 25-30 (1994).
Mireshghi et al., "Improved Electrical and Transport Characteristics of Amorphous Silicon by Enriching with Microcrystalline Cellulose," Mat. Res. Soc. Symp. Proc., vol. 336, pp. 337-382 (1994).
Shirai, "Surface Morphology and Crystallite Size during Growth of Hydrogenated Microcrystalline Silicon by Plasma-Enhanced Chemical Vapor Deposition," Jpn. J. Appl. Phys., vol. 34, pp. 450-458 (1995).
Micro)n Technology, Inc.
Patel Nimeshkumar D.
Santiago Mariceli
LandOfFree
Display device with silicon-containing adhesion layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Display device with silicon-containing adhesion layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Display device with silicon-containing adhesion layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1967111