Display device with active-matrix transistor having silicon...

Details Display device with active-matrix transistor having silicon... Display device with active-matrix transistor having silicon...

2006-04-04

2006-04-04

Schechter, Andrew (Department: 2871)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C349S140000, C257S072000, C438S487000, C438S488000

Reexamination Certificate

active

07023500

ABSTRACT:
An active matrix display device is provided which includes an active matrix substrate having a modified region which is formed by applying laser beams selectively to a silicon film formed on an insulating board. Active circuits, which include pixel circuits, are formed in the modified region. The pitch of the pixel circuits formed in a display region of the active matrix substrate, which display region is in the modified region, is set to be substantially equal to a pitch of peripheral circuits formed in the modified region in a peripheral region of the active matrix substrate. In addition, the pitch of the pixel circuits can be set to be substantially twice the pitch of the pixels themselves.

REFERENCES:
patent: 5648662 (1997-07-01), Zhang et al.
patent: 6297862 (2001-10-01), Murade
“Excimer Laser-induced Temperature Field in Melting and Resolidification of Silicon Thin Films,” Hatano et al., J. Appl. Phy., 2000 American Institute of Physics, vol. 87, pp. 36-43.
“Effect of Excimer Laser Annealing on the Structural and Electrical Properties of Polycrystalline Silicon Thin-Film Transistor,” C.T. Angelis et al., J. Appl. Phy., vol. 86, pp. 4600-4606, 1999.
“Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method,” H. Kuriyama et al., J. Appl. Phy., vol. 32, pp. 6190-6195, 1993.
“Correlation between Power Density Fluctuation and Grain Size Distribution of Laser Annealed Poly-Crystalline Silicon,” K. Suzuki et al., SPIE Conference, vol. 3618, pp. 310-319, 1999.

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