Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-04-09
2010-06-08
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE27111, C348S739000
Reexamination Certificate
active
07732818
ABSTRACT:
The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode.
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Maekawa Shinji
Shoji Hironobu
Yamazaki Shunpei
Coleman W. David
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Shook Daniel
LandOfFree
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