Display device including thin film transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S291000, C438S166000, C438S149000

Reexamination Certificate

active

07541615

ABSTRACT:
A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.

REFERENCES:
patent: 5981974 (1999-11-01), Makita
patent: 2004/0144988 (2004-07-01), Jung
patent: 2004/0245526 (2004-12-01), Park et al.
patent: 2005/0142050 (2005-06-01), Jung et al.
patent: 2005/0173752 (2005-08-01), Chung et al.
patent: 2006/0079033 (2006-04-01), Machida et al.
patent: 1 317 002 (2003-06-01), None
patent: 1 455 396 (2004-09-01), None
patent: 1 551 059 (2005-07-01), None
patent: 2003-77834 (2003-03-01), None
patent: 2003-332350 (2003-11-01), None
patent: 2006-100661 (2006-04-01), None
Voutsas et al., “Effect of parameters on the structural characteristics of laterally grown, laser-annealed polycrystalline silicon films,” vol. 94, pp. 7445-7452, 2003.
Jeon et al., “A New Poly-Si TFT With Selectively Doped Channel Fabricated by Novel Excimer Laser Annealing,” Electron Devices, pp. 213-216 (2000).
Yamaguchi et al., “Modeling and characterization of polycrystalline-silicon thin-film transistors with a channel-length comparable to a grain size,” Journal of Applied Physics, vol. 89, pp. 590-595, 2001.
Kimura et al., “Extraction of Trap States and the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors,” The Japan Society of Applied Physics, vol. 40, Part 1, pp. 5227-5236, 2001.
Kimura et al., “Device Simulation of Carrier Transport through Grain Boundaries in Lightly Doped Polysilicon Films and Dependence on Dopant Density,” The Japan Society of Applied Physics, vol. 40, Part 1, pp. 5237-5243, 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Display device including thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Display device including thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Display device including thin film transistors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4072899

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.