Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2011-03-15
2011-03-15
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S059000, C257S288000, C257S347000, C257SE21006, C257SE21051, C257SE21054, C257SE21170, C257SE21400, C257SE21229, C257SE21311, C257SE21329, C257SE21347, C257SE21134, C257SE21248, C257SE21267
Reexamination Certificate
active
07906834
ABSTRACT:
A display device having a thin film semiconductor device including a semiconductor thin film having first and second semiconductor regions formed each into a predetermined shape above an insulative substrate, a conductor fabricated into a predetermined shape to the semiconductor thin film and a dielectric film put between the semiconductor thin film and the conductor, in which the semiconductor thin film is a polycrystal thin film with the crystallization ratio thereof exceeding 90% and the difference of unevenness on the surface of the semiconductor thin film does not exceed 10 nm.
REFERENCES:
patent: 5637187 (1997-06-01), Takasu et al.
patent: 6067062 (2000-05-01), Takasu et al.
patent: 2008/0308143 (2008-12-01), Atanackovic
patent: WO 97/22141 (1995-12-01), None
patent: WO 97/22142 (1996-08-01), None
Mine Toshiyuki
Shima Akio
Tai Mitsuharu
A. Marquez, Esq. Juan Carlos
Hitachi Displays Ltd.
Nhu David
Stites & Harbison PLLC
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