Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-04-24
1999-04-20
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257204, 257287, 257336, 257344, 257347, 257408, H01L 2994
Patent
active
058959351
ABSTRACT:
A display device having high definition and high reliability, and technology for manufacturing the same. In an active matrix type display device of integrated peripheral driving circuit type, pixel TFTs of an active matrix circuit 100 are not provided with LDD regions. Also, among circuits constituting peripheral driving circuits 101, 102, buffer circuits, of which a high withstand voltage and high-speed operation are required, are made with thin film transistors having floating island regions and base regions between source and drain regions of their active layers.
REFERENCES:
patent: 5250835 (1993-10-01), Izawa
patent: 5323042 (1994-06-01), Matsumoto
patent: 5434441 (1995-07-01), Inoue et al.
Yamazaki Shunpei
Zhang Hongyong
Abraham Fetsum
Semiconductor Energy Laboratory Co,. Ltd.
Thomas Tom
LandOfFree
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