Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-08-16
2011-08-16
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S084000, C257S458000, C257S460000, C257S465000, C257S072000, C257S233000, C257S291000, C257S292000, C257SE33076, C257SE31058, C257SE31096, C257SE27133, C257SE25032
Reexamination Certificate
active
07999259
ABSTRACT:
A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other.
REFERENCES:
patent: 2005/0045881 (2005-03-01), Nakamura et al.
patent: 2005-275644 (2005-10-01), None
patent: 2007-241303 (2007-09-01), None
Ikeda Masanobu
Ito Ryoichi
Otani Natsuki
Seki Kenta
Takama Daisuke
Depke Robert J.
Lopez Fei Fei Yeung
Rockey Depke & Lyons, LLC
Sony Corporation
Tran Minh-Loan T
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