Display device and semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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C257S072000, C257S211000, C257S258000, C257S291000, C257S457000, C257SE33066

Reexamination Certificate

active

07863612

ABSTRACT:
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.

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Office Action (Application No. 200710136692.2) Dated Feb. 12, 2010, with English translation.

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