Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-09-14
2011-12-06
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE27111, C257SE21413, C257S071000, C438S029000, C349S043000
Reexamination Certificate
active
08071985
ABSTRACT:
The invention provides a display device having a thin film transistor and a storage capacitor storing a display signal applied to a pixel electrode through this thin film transistor on a substrate, where dielectric strength between electrodes forming the storage capacitor is enhanced for increasing the yield. In the storage capacitor, a lower storage capacitor electrode, a thin lower storage capacitor film, a polysilicon layer, an upper storage capacitor film and an upper storage capacitor electrode are layered. The polysilicon layer is formed by crystallization by laser annealing. The polysilicon layer of the storage capacitor is microcrystalline and thus the flatness of its surface is enhanced. The pattern of the polysilicon layer (storage capacitor electrode) is formed larger than the bottom portion of an opening, and the edge of its peripheral portion is located on a buffer film on the slant portion of the opening or on the buffer film on the outside of the opening.
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Morimoto Yusaku
Sakurai Toru
Umetani Yutaka
Harriston William
K&L Gates LLP
Mandala Victor A
Sony Corporation
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