Display device and method of manufacturing the same

Details Display device and method of manufacturing the same Display device and method of manufacturing the same

2005-07-19

2005-07-19

Kim, Robert H. (Department: 2871)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C257S071000, C257S072000

Reexamination Certificate

active

06919933

ABSTRACT:
In a semiconductor circuit in a display device, there are provided a first gate electrode of a first MOS transistor formed on a semiconductor layer via a gate insulating film, a second gate electrode of a second MOS transistor formed on the semiconductor layer via the gate insulating film at a distance from the first gate electrode, first and second one conductivity type impurity introduced regions formed in the semiconductor layer on both sides of the first gate electrode to serve as source/drain of the first MOS transistor, and first and second opposite conductivity type impurity introduced regions formed in the semiconductor layer on both sides of the second gate electrode to serve as source/drain of the second MOS transistor. One of the first and second opposite conductivity type impurity introduced regions is formed to contact mutually to the second one conductivity type impurity introduced region.

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