Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2003-04-14
2008-08-12
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S066000, C257S067000, C257S068000, C257S069000, C257S084000, C257S089000, C257S350000, C257SE27111, C257SE29278
Reexamination Certificate
active
07411215
ABSTRACT:
To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.
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Akimoto Kengo
Hayakawa Masahiko
Murakami Satoshi
Yamazaki Shunpei
Costellia Jeffrey L.
Gurley Lynne A.
Im Junghwa M
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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