Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2005-02-15
2005-02-15
Cuneo, Kamand (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
Reexamination Certificate
active
06855961
ABSTRACT:
A technique for obtaining light emitting devices manufactured with high yield is provided. The width of a seal pattern (605b) can be kept thin by manufacturing a light emitting device using a second substrate (600a) which has a concave portion (607a) and a concave portion (608a). It therefore becomes possible to make the light emitting device have a narrow frame. In addition, the light emitting device with the narrow frame can be realized by a manufacturing method thereof in which a portion of the second substrate from the concave portion to an edge surface is cut.
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Maruyama Junya
Takahashi Masahiro
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Cuneo Kamand
Geyer Scott B.
Semiconductor Energy Laboratory Co,. Ltd.
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