Liquid crystal cells – elements and systems – Nominal manufacturing methods or post manufacturing...
Reexamination Certificate
2006-12-21
2010-10-26
Nguyen, Dung T (Department: 2871)
Liquid crystal cells, elements and systems
Nominal manufacturing methods or post manufacturing...
C349S042000, C349S114000, C430S321000, C438S030000
Reexamination Certificate
active
07821613
ABSTRACT:
In a semi-transmission liquid crystal display device, two resist masks are required to form a reflective electrode and a transparent electrode; therefore, cost is high. A transparent electrode and a reflective electrode which function as a pixel electrode are stacked. A resist pattern which includes a region having a thick film thickness and a region having a thinner film thickness than the aforementioned region is formed over the reflective electrode by using a light exposure mask which includes a semi-transmission portion. The reflective electrode and the transparent electrode are formed by using the resist pattern. Therefore, the reflective electrode and the transparent electrode can be formed by using one resist mask.
REFERENCES:
patent: 6847426 (2005-01-01), Fujimori et al.
patent: 6850298 (2005-02-01), Fujimori et al.
patent: 6853421 (2005-02-01), Sakamoto et al.
patent: 7030948 (2006-04-01), Fujimori et al.
patent: 7061014 (2006-06-01), Hosono et al.
patent: 7064346 (2006-06-01), Kawasaki et al.
patent: 7142272 (2006-11-01), Fujimori et al.
patent: 7212267 (2007-05-01), Fujimori et al.
patent: 7282782 (2007-10-01), Hoffman et al.
patent: 7323356 (2008-01-01), Hosono et al.
patent: 2003/0164910 (2003-09-01), Yamazaki et al.
patent: 2004/0156604 (2004-08-01), Ino et al.
patent: 2004/0218123 (2004-11-01), Park et al.
patent: 2005/0030450 (2005-02-01), Okamoto et al.
patent: 2005/0094067 (2005-05-01), Sakamoto et al.
patent: 2005/0224804 (2005-10-01), Champion et al.
patent: 2005/0264729 (2005-12-01), Lin et al.
patent: 2006/0119771 (2006-06-01), Lim et al.
patent: 2006/0244107 (2006-11-01), Sugihara et al.
patent: 2007/0063211 (2007-03-01), Iwasaki
patent: 2007/0177083 (2007-08-01), Fujimori et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.
patent: 1402064 (2003-03-01), None
patent: 1410815 (2003-04-01), None
patent: 1415998 (2003-05-01), None
patent: 1134811 (2001-09-01), None
patent: 1284433 (2003-02-01), None
patent: 2005-251705 (1993-09-01), None
patent: 2000-044236 (2000-02-01), None
patent: 2000-150900 (2000-05-01), None
patent: 2002-076356 (2002-03-01), None
patent: 2002-229016 (2002-08-01), None
patent: 2002-289859 (2002-10-01), None
patent: 2004-046223 (2004-02-01), None
patent: 2004-109797 (2004-04-01), None
patent: 2004-334205 (2004-11-01), None
patent: 2005-033172 (2005-02-01), None
patent: 2005-338829 (2005-12-01), None
patent: 03/040441 (2003-05-01), None
Japan 2002-229016—English abstract provided by esp@cenet Worldwide (2006).
Japan 2004-046223—English abstract provided by esp@cenet Worldwide (2006) and family to U.S. Patent Application Publication No. 2005/0030450 (Desig ID “AC”).
Japan 2004-109797—English abstract provided by esp@cenet Worldwide (2006).
Japan 2004-334205—English abstract provided by esp@cenet Worldwide (2006) and family to U.S. Patent Application Publication No. 2004/0218123 (Desig. ID “AB”).
Japan 2005-338829—English abstract provided by esp@cenet Worldwide (2006) and family to U.S. Patent Application Publication No. 2005/0264729 (Desig. ID “AD”).
E. Yoda et al.; “20.2: Wide-Viewing-Angle Transflective TFT-LCDs with Hybrid Aligned Nematic Compensators”;SID 02 Digest; pp. 762-765; 2002.
Hong-Da Liu et al. “20.3: An Ultra Low Driving Voltage and High Performance Reflective Optical self-Compensated TFT-LCD with Wide-Viewing Angle Design”;SID 02 Digest; pp. 766-769; 2002.
S.J. Roosendaal et al.; “8.1: Novel High Performance Transflective LCD with a Patterned Retarder”;SID 03 Digest; pp. 78-81; 2003.
Yi-Pai Haung et al.; “8.3: A Single Cell-Gap Transflective Color TFT-LCD by using Image-Enhanced Reflector”;SID 03 Digest; pp. 86-89; 2003.
Mitsuru Tateuchi et al.; “56.1: Novel Pixel Structured High Resolution Transflective poly-Si TFT LCDs”;SID 03 Digest; pp. 1486-1489; 2003.
Seung-Gon Kang et al.; “4.2: Development of a Novel Transflective Color LTPS-LCD with Cap-Divided VA-Mode”;SID 04 Digest; pp. 31-33; 2004.
Y.H. Jeong et al.; “P-111: Voltage and Rubbing Angle Dependent Behavior of the Single Cell Gap Transflective Fringe Field Switching (FFS) Mode”;SID 05 Digest; pp. 723-725; 2005.
Chiu-Lien Yang et al.; “68.1: A Transflective OCB LCD with Wide Viewing Angle and Fast Response”;SID 05 Digest; pp. 1876-1879; 2005.
Chinese First Office Action (Chinese Application No. 200610156731.0) dated Oct. 16, 2009 with English translation 14 pages.
Li.C et al., “Modulated Structures of Homologous Compounds InMO3(ZnO)m (M=In,Ga; m=Integer) Described by Four-Dimensional Superspace Group,”, Journal of Solid State Chemistry, 1998, vol. 139, pp. 347-355, in English.
Nomura.K et al., “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films,”, Appl. Phys. Lett. (Applied Physics Letters), Sep. 13, 2004, vol. 85, No. 11, pp. 1993-1995, in English.
Kamiya. T et al., “1a-F-5 Room temperature fabrication and carrier transport of amorphous semiconductor exhibiting large electron Hall mobilities > 10 cm2/Vs,”, (The 65th Autumn Meeting, 2004) The Japan Society of Applied Physics, Sep. 1, 2004, No. 2, p. 791, Full English translation.
Nomura.K et al., “31a-ZA-6 Carrier Transport in Transparent Amorphous Oxide Semiconductor InGaZnO4,”, (The 51st Spring Meeting,2004); The Japan Society of Applied Physics and Related Societies, Mar. 28, 2004, No. 2, p. 669, Full English Translation.
Kimizuka.N. et al., “Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m=3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m=7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System,”, Journal of Solid State Chemistry, Apr. 1, 1995, vol. 116, No. 1, pp. 170-178, in English.
Nomura.K et al., “Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor,”, Science, May 23, 2003, vol. 300, No. 5623, pp. 1269-1272, in English.
Nomura.K et al., “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors,”, Nature, Nov. 25, 2004, vol. 432, pp. 488-492, in English.
Office Action, Chinese Application No. 200610156731.0; mailed May 19, 2010, 18 pages with English translation.
Duong Tai
Fish & Richardson P.C.
Nguyen Dung T
Semiconductor Energy Laboratory Co,. Ltd.
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