Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-09-05
2006-09-05
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000, C257S784000
Reexamination Certificate
active
07102231
ABSTRACT:
It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, represented by an EL display device and a liquid crystal display device. In the present invention, a wiring including Cu is provided as an electrode or a wiring used for the display device represented by the EL display device and the liquid crystal display device. Besides, sputtering is performed with a mask to form the wiring including Cu. With such structure, it is possible to reduce the voltage drop and a deadened signal.
REFERENCES:
patent: 4033833 (1977-07-01), Bestel et al.
patent: 4659650 (1987-04-01), Moritz et al.
patent: 5100499 (1992-03-01), Douglas
patent: 5693563 (1997-12-01), Teong
patent: 5726461 (1998-03-01), Shimada et al.
patent: 5851918 (1998-12-01), Song et al.
patent: 5889291 (1999-03-01), Koyama et al.
patent: 5929948 (1999-07-01), Ohori et al.
patent: 6015724 (2000-01-01), Yamazaki
patent: 6031290 (2000-02-01), Miyazaki et al.
patent: 6265247 (2001-07-01), Nakanishi et al.
patent: 6359320 (2002-03-01), Yamazaki et al.
patent: 6413845 (2002-07-01), Izumi et al.
patent: 6475912 (2002-11-01), Harada
patent: 6479900 (2002-11-01), Shinogi et al.
patent: 6498091 (2002-12-01), Chen et al.
patent: 6509616 (2003-01-01), Yamazaki
patent: 6509649 (2003-01-01), Sugai
patent: 6515365 (2003-02-01), Higashi et al.
patent: 6573602 (2003-06-01), Seo et al.
patent: 6890849 (2005-05-01), Kado et al.
patent: 6905907 (2005-06-01), Konuma
patent: 2001/0010370 (2001-08-01), Kimura et al.
patent: 2001/0015618 (2001-08-01), Yamazaki et al.
patent: 2001/0030322 (2001-10-01), Asada et al.
patent: 2002/0009818 (2002-01-01), Yoshimoto
patent: 2002/0044124 (2002-04-01), Yamazaki et al.
patent: 2002/0063287 (2002-05-01), Yamazaki et al.
patent: 2002/0070382 (2002-06-01), Yamazaki et al.
patent: 2002/0079503 (2002-06-01), Yamazaki et al.
patent: 2003/0090002 (2003-05-01), Sugwara et al.
patent: 2003/0127649 (2003-07-01), Chae
patent: 2004/0058527 (2004-03-01), Yamazaki et al.
patent: 2005/0014359 (2005-01-01), Segawa et al.
patent: 2005/0020061 (2005-01-01), Fang et al.
patent: 0 989 614 (2000-03-01), None
patent: 1 063 693 (2000-12-01), None
patent: 57-126967 (1982-08-01), None
patent: 61-235560 (1986-10-01), None
patent: 05-066421 (1993-03-01), None
patent: 06-148685 (1994-05-01), None
patent: 07-235680 (1995-09-01), None
patent: 08-274336 (1996-10-01), None
patent: 10-090711 (1998-04-01), None
patent: 11-016912 (1999-01-01), None
patent: 2000-058650 (2000-02-01), None
patent: 2000-357671 (2000-12-01), None
patent: 2001-196371 (2001-07-01), None
patent: 2001-236025 (2001-08-01), None
patent: 2001-254169 (2001-09-01), None
patent: 2001-313397 (2001-11-01), None
patent: 2002-108243 (2002-04-01), None
patent: 2002-353167 (2002-12-01), None
patent: WO 00/36641 (2000-06-01), None
Tetsuo Tsutsui et al.,High Quantum Efficiency in Organic Light-Emiting Devices with Iridium-Complex as a Triplet Emissive Center, Jp. J. Appl. Phys., vol. 38 (1999), pp. L1502, L1504, Part 2, No. 12B, Dec. 15, 1999.
M.A. Baldo et al.,Very High-Efficiency Green Organic Light-Emitting Devices Based on Electrophosphorescence, Applied Physics Letters, vol. 75, No. 1, Jul. 5, 1999, pp. 4-6.
M.A. Baldo et al.,High Efficient Phosphorescent Emission from Organic Electroluminescent Devices, Letter to Nature vol. 395, Sep. 10, 1998, pp. 151-154.
Stanely Wolf, 4.5.6.3Contact-Hole and Via Filling with Selective Electroless Metal Deposition, Silicon Processing for the VLSI Era, vol. 2, Process Integration, pp. 256-257.
Mutsuko Hatano et al.,A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT with High Reliability and Performance, IEDM, 1997, pp. 523-526.
International Search Report dated Dec. 24, 2003.
Written Opinion, Application No. PCT/JP03/11977 filed Sep. 19, 2003, PCT Office, May 25, 2004.
Osame Mitsuaki
Yamazaki Shunpei
Nguyen Tuan H.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Display device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Display device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Display device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3588105