Display device and manufacturing method of the same

Details Display device and manufacturing method of the same Display device and manufacturing method of the same

2008-01-01

2008-01-01

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S637000, C438S724000

Reexamination Certificate

active

07315076

ABSTRACT:
A display device is provided in which contact holes, each having a sidewall with an ideal tapered shape, are formed in a structure in which a silicon oxide film, a silicon nitride film and a silicon oxide film are stacked in the named order. The display device includes a first silicon oxide film, a silicon nitride film stacked on the first silicon oxide film, a second silicon oxide film stacked on the silicon nitride film, and a contact hole which extends through at least these three layers. In the display device, letting d2and d3denote, respectively, a film thickness of the silicon nitride film and a film thickness of the second silicon oxide film, these films are stacked to satisfy the relationship d2<d3, and the contact hole is formed to have a tapered shape free of constrictions.

REFERENCES:
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patent: 6396078 (2002-05-01), Uochi et al.
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patent: 09-251996 (1997-09-01), None
patent: 11-111990 (1999-04-01), None
patent: 11-258634 (1999-09-01), None

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