Display device and fabrication method thereof

Details Display device and fabrication method thereof Display device and fabrication method thereof

2008-10-17

2010-06-01

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S167000, C257S072000

Reexamination Certificate

active

07727784

ABSTRACT:
The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

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