Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-11-01
2008-11-25
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
07456433
ABSTRACT:
The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
REFERENCES:
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5920097 (1999-07-01), Horne
patent: 6303963 (2001-10-01), Ohtani et al.
patent: 6737672 (2004-05-01), Hara et al.
patent: 6756614 (2004-06-01), Hatano et al.
patent: 6943086 (2005-09-01), Hongo et al.
patent: 2001/0034093 (2001-10-01), Matsuzaki et al.
patent: 2002/0040981 (2002-04-01), Yamazaki et al.
patent: 2003/0201493 (2003-10-01), Ohuchi et al.
patent: 2004/0041158 (2004-03-01), Hong et al.
patent: 2004/0072411 (2004-04-01), Azami et al.
Itoga Toshihiko
Kaitoh Takuo
Kamo Takahiro
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi Displays Ltd.
Ho Anthony
Jackson, Jr. Jerome
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