Display device and electronic device using the same

Details Display device and electronic device using the same Display device and electronic device using the same

2007-12-25

2007-12-25

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S368000, C257S390000, C257S401000, C257SE25016, C257SE51018, C257SE33001, C257SE27111

Reexamination Certificate

active

10329993

ABSTRACT:
In display devices using thin film transistors, a graphoepitaxy is used for a semiconductor layer crystallizing process. Thus, a display device in which crystallinity is improved, a variation in characteristics of thin film transistors is reduced, display nonuniformity is less, and a display quality is superior is provided. Steps are formed on a substrate in advance and an amorphous silicon film is formed thereon, and then laser crystallization is conducted in a direction perpendicular to the steps.

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