Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2009-01-05
2010-11-16
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S079000
Reexamination Certificate
active
07834355
ABSTRACT:
A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L1and the channel width W1of the driving transistor, and the channel length L2and the channel width W2of the limiter transistor satisfy L1/W1:L2/W2=1:2 to 1:10.
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Abe Hiroko
Ando Yukari
Anzai Aya
Hayakawa Masahiko
Koyama Jun
Fish & Richardson P.C.
Pham Long
Semiconductor Energy Laboratory Co,. Ltd.
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