Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-10-10
2009-12-22
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S082000, C257SE27132
Reexamination Certificate
active
07635863
ABSTRACT:
A light-emitting element has a property that a resistance value (internal resistance) changes in accordance with an environmental temperature. It is an object to downsize a monitoring element which corrects an influence of variations in current value of the light-emitting element, which are caused by an environmental temperature change and a change with time. A pixel includes a plurality of sub-pixels, areas of light-emitting elements provided in the individual sub-pixels are made to be different from each other, and an area of a monitoring element is made to be the same as an area of the light-emitting element in any of the sub-pixels, thereby correcting light-emission of the pixel by the monitoring element.
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Fukumoto Ryota
Iwabuchi Tomoyuki
Nozawa Ryo
Osame Mitsuaki
Sato Mizuki
Fish & Richardson P.C.
Louie Wai-Sing
Semiconductor Energy Laboratory Co,. Ltd.
Skyles Tifney L
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