Display device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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C257S080000, C257S462000, C257SE31073, C257SE31079, C257SE31082, C438S030000

Reexamination Certificate

active

08058657

ABSTRACT:
A thin film transistor comprises: a first transistor region and a second transistor region defined on a substrate; and a first transistor and a second transistor respectively disposed on the first and second transistor regions, the first transistor comprising: a first semiconductor layer having source, channel, and drain regions defined on the substrate; a first insulating film disposed on the first semiconductor layer; a first transparent electrode disposed on the first insulating film and formed corresponding to the channel region of the first semiconductor layer; and a second insulating film disposed on the first transparent electrode, and the second transistor comprising: a second semiconductor layer having source, channel, and drain regions defined on the substrate; the first insulating film disposed on the second semiconductor layer; a second transparent electrode disposed on the first insulating film and formed corresponding to the channel region of the second semiconductor layer; a second gate disposed on the second transparent electrode; and the second insulating film disposed on the second gate.

REFERENCES:
patent: 5200634 (1993-04-01), Tsukada et al.
patent: 6255705 (2001-07-01), Zhang et al.
patent: 7242449 (2007-07-01), Yamazaki et al.
patent: 7586254 (2009-09-01), Kwak et al.
patent: 7977681 (2011-07-01), Im et al.
patent: 2005/0258744 (2005-11-01), Kwak et al.
patent: 2009/0032823 (2009-02-01), Im et al.

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