Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-12-18
2010-11-02
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE29320, C257SE27131, C257SE27132, C257SE29117, C349S042000, C349S043000
Reexamination Certificate
active
07825412
ABSTRACT:
The present invention provides a display device which can obviate the occurrence of a leak current in a thin film transistor. In a display device including a substrate, and gate signal lines, an insulation film, semiconductor layers and conductor layers which are sequentially stacked on the substrate, the conductor layer forms at least a drain electrode which is connected to a drain signal line and a source electrode which is connected to a pixel electrode, and the semiconductor layer is formed in a pattern in which the semiconductor layer has a protruding portion which protrudes outwardly from the conductor layer at a portion thereof except for a distal end of the drain electrode as viewed in a plan view.
REFERENCES:
patent: 5003356 (1991-03-01), Wakai et al.
patent: 2003-303973 (2002-04-01), None
patent: 2005-303119 (2004-04-01), None
Ishii Miyo
Uehara Junichi
Watanabe Kunihiko
A. Marquez, Esq. Juan Carlos
Hitachi Displays Ltd.
IPS Alpha Technology, Ltd.
Lopez Fei Fei Yeung
Stites & Harbison PLLC
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