Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-03-10
2009-11-17
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S059000, C257S072000, C257S084000, C257S098000, C257S099000, C257S040000, C257S763000, C257SE27111, C257SE29117, C257SE29147, C438S022000, C438S024000, C313S504000
Reexamination Certificate
active
07619258
ABSTRACT:
In a light emitting device using a light emitting element, the invention provides a sealing structure capable of preventing ingress of moisture from the outside and obtaining adequate reliability. The light emitting device has a light emitting element comprising a light emitting layer formed between a first electrode and a second electrode and a pixel portion comprising the light emitting element. The entire surface of the pixel portion is covered with the second electrode. An impermeable insulating film is formed in contact with the first electrode of the light emitting element. The edge of the first electrode and the impermeable insulating film are covered with a partition wall. An opening is formed along the circumference of the pixel portion in the partition wall. The opening passes through the partition wall in the thickness direction, and the side wall and the bottom face thereof are covered with the second electrode.
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Office Action re Chinese application No. CN 200510055811.2, dated Oct. 24, 2008 (with English translation).
Ebine Hideyuki
Hirakata Yoshiharu
Nishi Takeshi
Sakakura Masayuki
Tsuchiya Kaoru
Chiu Tsz K
Cook Alex Ltd.
Semiconductor Energy Laboratory Co,. Ltd.
Wilczewski M.
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