Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2007-01-02
2007-01-02
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S368000, C257S369000, C257S391000, C257S392000, C257S407000
Reexamination Certificate
active
10392862
ABSTRACT:
The present invention realizes a display device having C-MOS p-Si TFTs which enable the high integration by reducing spaces for P-MOS TFTs and N-MOS TFTs in driving circuit or the like thereof. The present invention adopts a self-aligned C-MOS process which uses a half tone mask as an exposure mask for manufacturing the C-MOS p-Si TFTs mounted on the display device. With the use of the half tone mask, the alignment or positioning at a bonding portion between a P-MOS portion and an N-MOS portion becomes unnecessary and hence, the number of photolithography steps can be reduced and the high integration of C-MOS TFT circuits can be realized.
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Kaneko Toshiki
Sonoda Daisuke
Antonelli, Terry Stout and Kraus, LLP.
Hitachi Displays Ltd.
Wojciechowicz Edward
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