Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-12-26
2006-12-26
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S072000, C257S350000
Reexamination Certificate
active
07154117
ABSTRACT:
A display device in which variations of characteristics of a TFT are eliminated and the aperture ratio is improved is provided. A display device has a thin film transistor on an insulating substrate10. The thin film transistor includes first gate electrodes11, a gate insulating film12, a semiconductor film13which is formed on the first gate electrode11, and a interlayer insulating film15. The thin film transistor further includes second gate electrodes70which are on the interlayer insulating film15and at least above channels13c, and which are connected to the first gate electrodes11. A reflective display electrode19connected to the source of the thin film transistor is elongated to extend above the thin film transistor.
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Noritake Kazuto
Sano Keiichi
Segawa Yasuo
Fish & Richardson P.C.
Richards N. Drew
Sanyo Electric Co,. Ltd.
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