Display device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Recrystallized semiconductor material

Reexamination Certificate

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C257S066000, C257S072000

Reexamination Certificate

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07102170

ABSTRACT:
The irregularities of characteristics of a pair of transistors, which are prepared by a pseudo single crystallizing technique, are reduced. To achieve this, semiconductor layers are formed on a substrate and have pseudo single crystal regions therein, and a plurality of thin film transistors are arranged inside of the pseudo single crystal regions. Two or more of the plurality of thin film transistors, which are required to exhibit small irregularities relative to each other as characteristics thereof, have the direction of the length of the gates of the respective thin film transistors arranged at an inclination of within ±20 degree with respect to the longitudinal direction of the strip-like grown crystals, and they are arranged such that, when channel regions of respective thin film transistors are imaginarily extended in parallel to the growth direction of the strip-like grown crystals, at least portions of the channel regions are superposed on each other.

REFERENCES:
patent: 6797550 (2004-09-01), Kokubo et al.
patent: 2003/0186490 (2003-10-01), Kato et al.
patent: 97/45827 (1997-12-01), None
M. Hatano, et al., “12.4L : Late-News Paper : Selectively Enlarging Laser Crystallization Technoloby for High and Uniform Performance Poly-Si TFTs”; SID 02 Digest, pp. 158-161.
M. Hatano, et al., “12.4L: Late-News Paper: Selectivity Enlarging Laser Crystallization Technoloby for High and Uniform Performance Poly-Si TFTs”; SID 02 Digest, pp. 158-161.

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